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InGaP HBT Technology Optimized for a 50 System Internal Reference Voltage Integrated GSM/EDGE Power Control with Temperature Compensation * Low Profile Surface Mount Package: 6 mm x 8 mm x 1 mm * RoHS Compliant Package, 250 oC MSL-3 WCDMa MODe * HSDPA Compliant * High Efficiency: 41% @ POUT = +28.5 dBm 21% @ POUT = +16 dBm * Low Quiescent Current: 12 mA * Low Leakage Current in Shutdown Mode: <1 A * Internal Voltage Regulator Eliminates the Need for External Reference Voltage * VEN = +2.4 V (+2.2 V min over Temp) GMsK MODe * +35 dBm GSM850/900 Output Power * +33 dBm DCS/PCS Output Power * 55 % GSM850/900 PAE * 50 % DCS/PCS PAE * Power Control Range > 50 dB * EGPRS Capable (class 12) eDGe MODe * +29 dBm GSM850/900 Output Power * +28.5 dBm DCS/PCS Output Power * 27 % GSM850/900 PAE * 30 % DCS/PCS PAE * -63 dBc/30 kHz Typical ACPR (400 kHz) * -77 dBc/30 kHz Typical ACPR (600 kHz) * * * *
Features
WCDMa/GsM/GPrs/Polar eDGe Power Amplifier Module with Integrated Power Control
Data sheet - rev 2.0 InGaP HBT MMIC technology to provide reliability, temperature stability, and ruggedness. This pentaband module consists of three amplifier chains; one to support GSM/GPRS/EGPRS in cellular bands, one to support GSM/GPRS/EGPRS in DCS/PCS bands, and one to support WCDMA in the IMT band. In addition, the AWT6223R module includes an internal reference voltage and integrated power control with temperature compensation for use in GMSK and 8-PSK modes of operation. These features facilitate fast and easy production calibration, minimize performance variation over temperature, and reduce the number of external components required. The WCDMA PA incorporates ANADIGICS' HELP2 technology. Through selectable bias modes, the AWT6223R achieves optimal efficiency across different output power levels, specifically at low and mid-range power levels where the PA typically operates, thereby dramatically increasing handset talk-time and standby-time. Its built-in voltage regulator eliminates the need for an external reference voltage and switch components, reducing PCB area and BOM costs. All of the RF ports for this device are internally matched to 50 . The RF inputs GSM_IN and DCS/ PCS_IN both have shunt resistors to ground to maintain a good input VSWR as the VRAMP power control voltage is varied. Internal DC blocks are provided at the RF outputs.
CEXT2 WCDMA_IN VMODE VEN DCS/PCS_IN BS TX_EN VBATT CEXT1 VRAMP GSM850/900_IN 1 2 3 4 5 6 7 8 9 10 11 VCC_GSM
CMOS Bias/Power Controller Voltage Regulator and Bias Control
AWT6223R
TM
aPPLICatIONs
*
22
21 20 19 18 17 16 15 14 13 12
VCC_WCDMA WCDMA_OUT GND DCS/PCS_OUT GND GND CEXT3 GND GND GSM850/900_OUT
3G Handsets, Smartphones, Data Devices Incorporating: * WCDMA (IMT) *GSM850/GSM900/DCS/PCS Bands * GMSK and 8-PSK (Open Loop Polar) Modulations
PrODuCt DesCrIPtION
The AWT6223R WEDGE module supports dual, tri, or quad band operation using GMSK/GPRS and 8-PSK (open loop polar) modulations, and WCDMA operation in the IMT band. The AWT6223R module is manufactured using ANADIGICS' advanced
11/2008
Figure 1: Block Diagram
AWT6223R
CEXT2 WCDMA_IN VMODE VEN DCS/PCS_IN BS TX_EN VBATT CEXT1 VRAMP GSM850/900_IN 1 2 3 4 5 6 7 8 9 10 11 VCC_GSM GND 22 21 20 19 18 17 16 15 14 13 12 VCC_WCDMA WCDMA_OUT GND DCS/PCS_OUT GND GND CEXT3 GND GND GSM850/900_OUT
Figure 2: Pinout (X - ray top view) table 1: Pin Description
PIN 1 2 3 4 5 6 7 8 9 10 11 NaMe WCDMA_IN VMODE VEN DCS/PCS_IN BS TX_EN VBATT CEXT1 VRAMP DesCrIPtION WCDMA RF Input WCDMA Mode Control Voltage WCDMA Shutdown DCS/PCS RF Input Band Select Logic Input TX Enable Logic Input Battery Supply Bypass for Internal Voltage Regulator Analog signal used to control the GSM output power PIN 12 13 14 15 16 17 18 19 20 21 22 NaMe DesCrIPtION GSM850/900_OUT GSM850/900 RF Output GND GND CEXT3 GND GND DCS/PCS_OUT GND WCDMA_OUT VCC_WCDMA CEXT2 Ground Ground Bypass for Power Control Regulator Ground Ground DCS/PCS RF Output Ground WCDMA RF Output WCDMA Supply Voltage Bypass for WCDMA VCC1
GSM850/900_IN GSM850/900 RF Input VCC_GSM VCC test point for GSM secton. Do not connect. Do not ground.
2
Data Sheet - Rev 2.0 11/2008
AWT6223R
eLeCtrICaL CHaraCterIstICs
table 2: absolute Maximum ratings
ParaMeter Supply Voltage (VBATT) Supply Voltage (VCC_WCDMA) RF Input Power (RFIN) GSM/EDGE Output Control Voltage (VRAMP) WCDMA Control Voltages (VMODE, VEN) Storage Temperature (TSTG) MIN -0.3 0 -55 MaX +6 +5 10 1.8 3.5 150 uNIts V V dBm V V C
Stresses in excess of the absolute ratings may cause permanent damage. Functional operation is not implied under these conditions. Exposure to absolute ratings for extended periods of time may adversely affect reliability.
CEXT2 >+2500 V <-2500 V WCDMA_IN >+1500 V <-1500 V VMODE >+1500 V <-1500 V VEN >+1500 V <-1500 V DCS/PCS_IN >+2500 V <-2500 V BS >+2500 V <-2500 V TX_EN >+2500 V <-2500 V VBATT >+2500 V <-2500 V CEXT1 >+2500 V <-2500 V VRAMP >+2500 V <-2500 V GSM850/900_IN >+2500 V <-2500 V 1 2 3 4 5 6 7 8 9 10 11 GND 22 21 20 19 18 17 16 15 14 13 12 VCC_WCDMA >+1300 V <-1300 V WCDMA_OUT >+1500 V <-1500 V GND DCS/PCS_OUT >+2500 V <-2500 V GND GND CEXT3 >+2500 V <-2500 V GND GND GSM850/900_OUT >+2500 V <-2500 V
VCC_GSM >+2500 V <-2500 V
Figure 3: esD Pin rating
Electrostatic Discharge Sensitivity
The AWT6223R part was tested to determine the ESD sensitivity of each package pin with respect to Ground. Non-ground pins are stressed with 1 positive pulse or 1 negative pulse with respect to the Ground using the Human Body Model apparatus and waveform outlined in JESD22-A114C.01. Determination of pass or fail is made according to whether the part passes key RF tests against the datasheet limits after stress. Results of the test are presented in Figure 3:
Rating for WCDMA_IN, VMODE, VEN, and WCDMA_OUT is +1500V and -1500V; * Rating for VCC_WCDMA is +1300V and -1300V; * Rating for DCS/PCS_IN, BS, Tx_EN, VBATT, CEXT1, VRAMP, GSM_IN, VCC_GSM, GSM_OUT, CEXT3 and DCS/PCS_OUT is +2500V and -2500V It is very important to take all necessary precautions, listed in Application Notes "ESD precautions for ANADIGICS GaAs MMIC," to avoid ESD damage to * 3
Data Sheet - Rev 2.0 11/2008
AWT6223R Table 3: GSM/EDGE Operating Conditions
ParaMeter
Case temperature (TC) Supply voltage (VBATT) Total Power Supply Leakage Current Control Voltage Range Turn On Time (TON) Turn Off Time (TOFF) Rise Time (TRISE) Fall Time (TFALL) VRAMP Input Capacitance VRAMP Input Current Duty Cycle
MIN
-20 3.0 0.2 -
tYP
3.5 1 3 -
MaX
85 4.8 10 1.6 1 1 1 1 10 50
uNIts
C V A V s s s s pF A %
COMMeNts
VBATT = VCC_WCDMA = 4.8 V, VEN = 0 V, VMODE = 0 V, BS = 0 V, VRAMP = 0 V, TX_EN = LOW, No RF applied VRAMP = 0.2 V, TX_EN = LOW Y HIGH PIN = 5 dBm VRAMP = 0.2 V, TX_EN = LOW Y HIGH PIN = 5 dBm
POUT = PMAX Y -10 dBm (within 0.2 dB)
POUT = -10 dBm Y PMAX (within 0.2 dB)
The device may be operated safely over these conditions; however, parametric performance is guaranteed only over the conditions defined in the electrical specifications. Notes: 1. Do not apply a DC voltage to the GSM_IN or DCS/PCS_IN RF inputs.
table 4: GsM/eDGe Digital Inputs
ParaMeter
Logic High Voltage Logic Low Voltage Logic High Current Logic Low Current
sYMBOL
VIH VIL |IIH| |IIL|
MIN
1.2 -
tYP
-
MaX
3.0 0.5 30 30
uNIts
V V A A
table 5: GsM/eDGe Logic Control
OPeratIONaL MODe
GSM850/900 DCS/PCS PA DISABLED
Bs
LOW HIGH -
tX_eN
HIGH HIGH LOW
Notes: 1. VBATT must be applied before taking BS and/or TX_EN High.
4
Data Sheet - Rev 2.0 11/2008
AWT6223R Table 6: Electrical Characteristics for GSM850 GMSK Mode (Unless Otherwise Specified: VBATT = 3.5 V, PIN = 3.0 dBm, Pulse Width =1154 s, Duty = 25%, ZIN = ZOUT = 50 , TC = 25 C, VRAMP = 1.6 V, BS = LOW, TX_EN = HIGH, VeN = LOW)
ParaMeter Operating Frequency Input Power Output Power, PMAX Degraded Output Power PAE @ PMAX Forward Isolation 1 Forward Isolation 2 Cross Isolation 2Fo @ DCS/PCS port 3Fo @ DCS/PCS port Second Harmonic Third Harmonic n x Fo (n > 4), Fo 12.75 GHz Stability
(Fo)
MIN 824 0 34.5 32.0 48 -
tYP 3 35 32.5 52 -42 -25 -36 -25 -20 -30 -30
MaX 849 5 -30 -20 -20 -20 -10 -10 -10
uNIt MHz dBm dBm dBm % dBm dBm
COMMeNts
Freq = 824 to 849 MHz VBATT = 3.0 V, TC = 85 C PIN = 0 dBm Freq = 824 to 849 MHz TX_EN = LOW, PIN = 5 dBm TX_EN = HIGH,VRAMP = 0.2V, PIN = 5 dBm
dBm dBm dBm dBm
VRAMP =0.2V to VRAMP_MAX Over all output power levels Over all output power levels Over all output power levels
VSWR = 8:1 All Phases , POUT < 34.5 dBm Ruggedness RX Noise Power Input Return Loss -36 -30 dBm dBm FOUT < 1 GHz FOUT > 1 GHz POUT < 34.5 dBm FTX = 849 MHz, RBW = 100 kHz FRX = 869 to 894 MHz, POUT < 34.5 dBm Over all output power levels
No Permanent Degradation, VSWR 10:1, All Phase Angles -86 1.5:1 -83 2.5:1 dBm VSWR
Data Sheet - Rev 2.0 11/2008
5
AWT6223R Table 7: Electrical Characteristics for GSM900 GMSK Mode (Unless Otherwise Specified: VBATT = 3.5 V, PIN = 3.0 dBm, Pulse Width =1154 s, Duty = 25%, ZIN = ZOUT = 50 , TC = 25 C, VRAMP = 1.6 V, BS = LOW, TX_EN = HIGH, VeN = LOW)
ParaMeter Operating Frequency Input Power Output Power, PMAX Degraded Output Power PAE @ PMAX Forward Isolation 1 Forward Isolation 2 Cross Isolation 2Fo @ DCS/PCS port 3Fo @ DCS/PCS port Second Harmonic Third Harmonic n x Fo (n > 4), Fo 12.75 GHz Stability
( Fo )
MIN 880 0 34.5 32.0 50 -
tYP 3 35 32.5 55 -40 -25 -34 -22 -25 -27 -30
MaX 915 5 -30 -20 -20 -17 -10 -10 -10
uNIt MHz dBm dBm dBm % dBm dBm
COMMeNts
Freq = 880 to 915 MHz VBATT = 3.0 V, TC = 85 C PIN = 0 dBm Freq = 880 to 915 MHz TX_EN = LOW, PIN = 5 dBm TX_EN = HIGH,VRAMP = 0.2V, PIN = 5 dBm
dBm dBm dBm dBm
VRAMP =0.2V to VRAMP_MAX Over all output power levels Over all output power levels Over all output power levels
VSWR = 8:1 All Phases , POUT < 34.5 dBm Ruggedness -36 -30 dBm dBm FOUT < 1 GHz FOUT > 1 GHz POUT < 34.5 dBm FTX = 915 MHz, RBW = 100 kHz FRX = 925 to 935 MHz, POUT < 34.5 dBm FTX = 915 MHz, RBW = 100 kHz FRX = 935 to 960 MHz, POUT < 34.5 dBm Over all output power levels
No Permanent Degradation, VSWR 10:1, All Phase Angles -83 -86 1.5:1 -77 -83 2.5:1 dBm dBm VSWR
RX Noise Power Input Return Loss -
6
Data Sheet - Rev 2.0 11/2008
AWT6223R Table 8: Electrical Characteristics for GSM850 8PSK Mode (Unless Otherwise Specified: VBATT = 3.5 V, PIN = 3.0 dBm, Pulse Width =1154 s, Duty = 25% ZIN = ZOUT = 50 , TC = 25 C, BS = LOW, TX_EN = HIGH, VeN = LOW)
ParaMeter Operating Frequency Input Power PAE ACPR 200 kHz 400 kHz 600 kHz 1800 kHz EVM
( FIN )
MIN 824 880 0 20
tYP 3 27
MaX 849 915 5 -
uNIt MHz dBm %
COMMeNts
FIN = 824 to 849 MHz POUT set = +29 dBm
-
-39 -63 -74 -77 1
-34 -58 -64 -68 5
dBc/30 kHz dBc/30 kHz dBc/30 kHz dBc/100 kHz %
All conditions under Polar operation POUT = +29 dBm All Conditions under Polar operation POUT = +29 dBm
Data Sheet - Rev 2.0 11/2008
7
AWT6223R Table 9: Electrical Characteristics for DCS GMSK Mode (Unless Otherwise Specified: VBATT = 3.5 V, PIN = 3.0 dBm, Pulse Width =1154 s, Duty = 25%, ZIN = ZOUT = 50 , TC = 25 C, VRAMP = 1.6 V, BS = HIGH, TX_EN = HIGH, VeN = LOW)
ParaMeter Operating Frequency Input Power Output Power, PMAX Degraded Output Power PAE @ PMAX Forward Isolation 1 Forward Isolation 2 Second Harmonic Third Harmonic n x Fo (n > 4), Fo 12.75 GHz MIN 1710 0 32 29.5 45 tYP 3.0 33 30.5 50 -40 -24 -18 -24 -30 MaX 1785 5 -33 -20 -10 -10 -10 uNIt MHz dBm dBm dBm % dBm dBm dBm dBm dBm VBATT = 3.0 V, TC = 85 C PIN = 0 dBm Freq = 1710 to 1910 MHz TX_EN = LOW, PIN = 5dBm TX_EN =HIGH, VRAMP = 0.2 V, PIN = 5 dBm Over all output power levels Over all output power levels Over all output power levels COMMeNts
VSWR = 8:1 All Phases , POUT < 32 dBm Stability Ruggedness RX Noise Power Input Return Loss -36 -30 dBm dBm FOUT < 1 GHz FOUT > 1 GHz POUT < 32 dBm FTX = 1785 MHz, RBW = 100 kHz, FRX =1805 to 1880 MHz, POUT < 32 dBm Over all output power levels
No Permanent Degradation, VSWR 10:1, All Phase Angles -86 1.5:1 -80 2.5:1 dBm VSWR
8
Data Sheet - Rev 2.0 11/2008
AWT6223R Table 10: Electrical Characteristics for PCS GMSK Mode (Unless Otherwise Specified: VBATT = 3.5 V, PIN = 3.0 dBm, Pulse Width =1154 s, Duty = 25%, ZIN = ZOUT = 50 , TC = 25 C, VRAMP = 1.6 V, BS = HIGH, TX_EN = HIGH, VeN = LOW)
ParaMeter Operating Frequency Input Power Output Power, PMAX Degraded Output Power PAE @ PMAX Forward Isolation 1 Forward Isolation 2 Second Harmonic Third Harmonic n x Fo (n > 4), Fo 12.75 GHz MIN 1850 0 32 29.5 45 tYP 3.0 33 30.5 50 -37 -22 -28 -24 -30 MaX 1910 5 -33 -18 -10 -10 -10 uNIt MHz dBm dBm dBm % dBm dBm dBm dBm dBm VBATT = 3.0 V, TC = 85 C PIN = 0 dBm Freq = 1710 to 1910 MHz TX_EN = LOW, PIN = 5dBm TX_EN =HIGH, VRAMP = 0.2 V, PIN = 5 dBm Over all output power levels Over all output power levels Over all output power levels COMMeNts
VSWR = 8:1 All Phases , POUT < 32 dBm Stability Ruggedness RX Noise Power Input Return Loss -36 -30 dBm dBm FOUT < 1 GHz FOUT > 1 GHz POUT < 32 dBm FTX = 1910 MHz, RBW = 100 kHz, FRX =1930 to 1990 MHz, POUT < 32 dBm Over all output power levels
No Permanent Degradation, VSWR 10:1, All Phase Angles -86 1.5:1 -80 2.5:1 dBm VSWR
Data Sheet - Rev 2.0 11/2008
9
AWT6223R Table 11: Electrical Characteristics for DCS 8PSK Mode (Unless Otherwise Specified: VBATT = 3.5 V, PIN = 3.0 dBm, Pulse Width =1154 s, Duty = 25%, ZIN = ZOUT = 50 , TC = 25 C , BS =HIGH, TX_EN = HIGH, VeN = LOW)
ParaMeter Operating Frequency Input Power PAE ACPR 200 kHz 400 kHz 600 kHz 1800 kHz EVM
( FIN )
MIN 1710 1850 0 25
tYP 3 30
MaX 1785 1910 5 -
uNIt MHz dBm %
COMMeNts
FIN = 1710 to 1785 MHz POUT set = +28.5 dBm
-
-38 -64 -77 -77 1
-34 -58 -64 -68 5
dBc/30 kHz dBc/30 kHz dBc/30 kHz dBc/100 kHz %
All conditions under Polar operation POUT = +28.5 dBm All Conditions under Polar operation POUT = +28.5 dBm
10
Data Sheet - Rev 2.0 11/2008
AWT6223R Table 12: WCDMA Operating Conditions
ParaMeter
Case temperature (TC) Supply Voltage (VCC) WCDMA Enable Voltage (VEN) Mode Control Voltage (VMODE) RF Output Power (POUT) 3GPP HSDPA Case A HSDPA Case B HSDPA Case C
MIN
-20 +3.2 +2.2 0 +2.2 0 +28.0 (1) +27.0 (1) +26.0 (1) +25.5 (1)
tYP
+3.4 +2.4 +2.4 +28.5 +27.5 +26.5 +26.0
MaX uNIts
85 +4.2 +3.1 +0.5 +3.1 +0.5 C V V V
COMMeNts
POUT < +28.5 dBm PA "on" PA "shut down" Low Bias Mode High Bias Mode
dBm
1/15 < c/d < 12/15 13/15 < c/d < 15/8 15/7 < c/d < 15/0
The device may be operated safely over these conditions; however, parametric performance is guaranteed only over the conditions defined in the electrical specifications. Notes: (1) WCDMA operation at VCC = +3.2 V, Pout is derated by 0.5 dB. (2) Do not apply a DC voltage to the WCDMA_IN RF input.
table 13: WCDMa Bias Control
aPPLICatION WCDMA - low power WCDMA - high power Shutdown POut LeveLs <+16 dBm >+16 dBm LOGIC Low High Shutdown veN +2.4 V +2.4 V 0V vMODe +2.4 V 0V 0V
Notes: 1. For WCDMA operation set TX_EN = LOW.
Data Sheet - Rev 2.0 11/2008
11
AWT6223R table 14: electrical Characteristics for WCDMa (Unless Otherwise Specified: TC = 25 C, VBATT = +3.4 V, TX_EN = LOW, 50 system, VeN = 2.4 v)
ParaMeter Operating Frequency Gain ACLR1 at 5 MHz offset (1) ACLR2 at 10 MHz offset Power-Added Efficiency (1) Quiescent Current (Icq) Enable Current Battery Current Mode Control Current Noise in Receive Band Harmonics 2fo 3fo, 4fo Input Impedance Spurious Output Level (all spurious outputs) Load mismatch stress with no permanent degradation or failure MIN 1920 24.5 13.0 37 18 tYP 26.5 15.0 -40 -43 -56 -52 41 21 12 0.2 3 0.3 -138 -43 -50 MaX 1980 28.5 17.0 -38 -38 -48 -48 20 1 5 1 -135 -35 -35 2:1 uNIt MHz dB POUT = +28.5 dBm, VMODE = 0 V POUT = +16 dBm, VMODE = +2.4 V POUT = +28.5 dBm, VMODE = 0 V POUT = +16 dBm, VMODE = +2.4 V POUT = +28.5 dBm, VMODE = 0 V POUT = +16 dBm, VMODE = +2.4 V POUT = +28.5 dBm, VMODE = 0 V POUT = +16 dBm, VMODE = +2.4 V VMODE = +2.4 V through VEN pin through VBATT pin, VMODE = +2.4 V through VMODE pin, VMODE = +2.4 V COMMeNts
dBc dBc % mA mA mA mA
dBm/Hz 2110 MHz to 2170 MHz
dBc VSWR
POUT < +28.5 dBm
-
-
-70
dBc
POUT < +28.5 dBm In-band load VSWR < 5:1 Out-of-band load VSWR < 10:1 Applies over all operating conditions Applies over full operating range
10:1
-
-
VSWR
Notes: (1) ACLR and Efficiency measured at 1950 MHz.
12
Data Sheet - Rev 2.0 11/2008
AWT6223R
aPPLICatION INFOrMatION
To ensure proper performance, refer to all related Application Notes on the ANADIGICS web site: http://www.anadigics.com Shutdown Mode The WCDMA power amplifier may be placed in a shutdown mode by applying logic low levels (see Operating Ranges table) to both the VEN and VMODE voltages. Bias Modes The WCDMA power amplifier may be placed in either a Low Bias mode or a High Bias mode by applying the appropriate logic level (see Operating Ranges table) to the VMODE voltage. The Bias Control table lists the recommended modes of operation for various applications. Two operating modes are recommended to optimize current consumption. High Bias operating mode is for POUT levels > 16 dBm. At or below +16 dBm, the PA should be "Mode Switched" to Low Bias Mode.
BATTERY VOLTAGE
4.7uF ++
10nF++
22pF**
22 VBATT
SUPPLY VOLTAGE FROM DC-DC CONVERTER***
IMT RF INPUT WCDMA BIAS MODE WCDMA ENABLE DCS/PCS RF INPUT BAND SELECT TX ENABLE BATTERY VOLTAGE 4.7uF ++ 27pF ++ 27pF ++ 2.7pF ** 22nF DAC OUTPUT GSM850/900 RF INPUT 10K
* **
1 2 27pF
++
WCDMA_IN VMODE VEN DCS/PCS_PIN BS TX_EN VBATT CEXT VRA MP GSM850/900_IN VCC2_GSM 11
V CC_WCDMA WCDMA_OUT GND DCS/PCS_OUT GND GND VCC_OUT GND GND GSM850/900_OUT
21 20 19 18 17 16 15 14 13 12 GSM850/900 RF OUTPUT 1nF** 10nF ++ 22pF**
3 4 5 6 7 8 9 10
WCDMA RF OUTPUT DCS/PCS RF OUTPUT
27pF ++
AWT6223R
27pF*
*
Filtering may be required to filter noise from baseband.
** This component should be placed as close to the device pin as possible. *** If the final design uses a DC-DC Converter, otherwise connect Pin 21 directly to VBATT Pin 22. ++ These components are recommended as good design practice for improving noise rejection characteristics. The values specified are not critical as they may not be required in the final application.
Figure 4: application Circuit
Data Sheet - Rev 2.0 11/2008
13
AWT6223R
PaCKaGe OutLINe
Figure 5: Package Outline - 22 Pin 6 mm x 8 mm x 1 mm surface Mount Package
Figure 6: Branding Specification 14
Data Sheet - Rev 2.0 11/2008
AWT6223R
COMPONeNt PaCKaGING
8.00.10 [.314.004] O1.50.10 [O.059.004] 2.00.10 [.079.004]
4.00.10 [.157.004] 1.75.10 [.069.004] 6MAX
16.00+.30/-.10 [.630+.012/-.004]
7.50.10 [.295.004] 8.36.10 [.329.004]
Bo
PIN#1 ORIENTATION
t
O1.50.25 [O.059.010]
1.78.10 [.070.004] .305.02 [.0120.0007]
Ko
Ao
NOTES:
1. MATERIAL: 3000 (CARBON FILLED POLYCARBONATE) 100% RECYCLABLE.
6.35.10 [.250.004]
8MAX
Figure 7: tape & reel Packaging
table 14: tape & reel Dimensions
PaCKaGe tYPe 6 mm x 8 mm x 1 mm taPe WIDtH 16 mm POCKet PItCH 8 mm reeL CaPaCItY 2500 MaX reeL DIa 13"
Data Sheet - Rev 2.0 11/2008
15
AWT6223R
OrDerING INFOrMatION
OrDer NuMBer teMPerature raNGe -20 oC to +85 oC PaCKaGe DesCrIPtION COMPONeNt PaCKaGING
AWT6223RM26P8
RoHS Compliant 24 Pin 6 mm x 8 mm x 1 mm Tape and Reel, 2500 pieces per Reel Surface Mount Module RoHS Compliant 24 Pin 6 mm x 8 mm x 1 mm Tape and Reel, Partial Reel Surface Mount Module
AWT6223RM26P9
-20 oC to +85 oC
ANADIGICS, Inc.
141 Mount Bethel Road Warren, New Jersey 07059, U.S.A. Tel: +1 (908) 668-5000 Fax: +1 (908) 668-5132 URL: http://www.anadigics.com E-mail: Mktg@anadigics.com IMPOrtaNt NOtICe
ANADIGICS, Inc. reserves the right to make changes to its products or to discontinue any product at any time without notice. The product specifications contained in Advanced Product Information sheets and Preliminary Data Sheets are subject to change prior to a product's formal introduction. Information in Data Sheets have been carefully checked and are assumed to be reliable; however, ANADIGICS assumes no responsibilities for inaccuracies. ANADIGICS strongly urges customers to verify that the information they are using is current before placing orders.
ANADIGICS products are not intended for use in life support appliances, devices or systems. Use of an ANADIGICS product in any such application without written consent is prohibited.
WarNING
16
Data Sheet - Rev 2.0 11/2008

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